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Complementary Resistive Switching in Niobium Oxide-Based Resistive Memory Devices
- Title
- Complementary Resistive Switching in Niobium Oxide-Based Resistive Memory Devices
- POSTECH Authors
- Hwang, H
- Date Issued
- Feb-2013
- Publisher
- Institute of Electrical and Electronics Engineers Inc..
- Keywords
- Complementary resistive switch (CRS); crossbar array; nonvolatile memory; resistive memory; resistive random access memory (RRAM)
- ISSN
- 0741-3106
- Article Type
- Article
- Citation
- IEEE Electron Device Letters, vol. 34, no. 2, page. 235 - 237, 2013-02
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Related Researcher
- 황현상HWANG, HYUNSANG
- Dept of Materials Science & Enginrg