Complementary Resistive Switching in Niobium Oxide-Based Resistive Memory Devices
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SCOPUS
- Title
- Complementary Resistive Switching in Niobium Oxide-Based Resistive Memory Devices
- Authors
- Liu, X; Sadaf, SM; Park, S; Kim, S; Cha, E; Lee, D; Jung, GY; Hwang, H
- Date Issued
- 2013-02
- Publisher
- Institute of Electrical and Electronics Engineers Inc..
- Abstract
- For the applications of resistive random access memory (RRAM), we study the complementary resistive switch (CRS) behavior of a bilayer Nb2O5-x/NbOy RRAM. The CRS effect is explained by the redistribution of oxygen vacancies inside the two niobium oxide layers. Improved CRS effects were observed using W top electrode (TE) instead of Pt, which can be attributed to the oxygen barrier layer derived from a self-formed WOx layer between the W TE and the Nb2O5-x oxide film. The niobium oxide-based CRS devices within a single memory cell can be directly integrated into a crossbar memory array without the need of extra diodes; this can significantly reduce the fabrication complexity.
- Keywords
- Complementary resistive switch (CRS); crossbar array; nonvolatile memory; resistive memory; resistive random access memory (RRAM)
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/14937
- DOI
- 10.1109/LED.2012.2235816
- ISSN
- 0741-3106
- Article Type
- Article
- Citation
- IEEE Electron Device Letters, vol. 34, no. 2, page. 235 - 237, 2013-02
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- There are no files associated with this item.
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