Article
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Cited 34 time in
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Liu, X | ko |
| dc.contributor.author | Sadaf, SM | ko |
| dc.contributor.author | Park, S | ko |
| dc.contributor.author | Kim, S | ko |
| dc.contributor.author | Cha, E | ko |
| dc.contributor.author | Lee, D | ko |
| dc.contributor.author | Jung, GY | ko |
| dc.contributor.author | Hwang, H | ko |
| dc.date.available | 2016-03-31T08:16:20Z | - |
| dc.date.created | 2014-03-03 | - |
| dc.date.issued | 2013-02 | - |
| dc.identifier.citation | IEEE Electron Device Letters, v.34, no.2, pp.235 - 237 | - |
| dc.identifier.issn | 0741-3106 | - |
| dc.identifier.other | 2013-OAK-0000029022 | - |
| dc.identifier.uri | http://oasis.postech.ac.kr/handle/2014.oak/14937 | - |
| dc.description.statementofresponsibility | X | - |
| dc.language | English | - |
| dc.publisher | Institute of Electrical and Electronics Engineers Inc.. | - |
| dc.subject | Complementary resistive switch (CRS) | - |
| dc.subject | crossbar array | - |
| dc.subject | nonvolatile memory | - |
| dc.subject | resistive memory | - |
| dc.subject | resistive random access memory (RRAM) | - |
| dc.title | Complementary Resistive Switching in Niobium Oxide-Based Resistive Memory Devices | - |
| dc.type | Article | - |
| dc.contributor.college | 신소재공학과 | - |
| dc.identifier.doi | 10.1109/LED.2012.2235816 | - |
| dc.author.google | Liu, X | - |
| dc.author.google | Sadaf, SM | - |
| dc.author.google | Park, S | - |
| dc.author.google | Kim, S | - |
| dc.author.google | Cha, E | - |
| dc.author.google | Lee, D | - |
| dc.author.google | Jung, GY | - |
| dc.author.google | Hwang, H | - |
| dc.relation.volume | 34 | - |
| dc.relation.issue | 2 | - |
| dc.relation.startpage | 235 | - |
| dc.relation.lastpage | 237 | - |
| dc.contributor.id | 10079928 | - |
| dc.publisher.location | US | - |
| dc.relation.journal | IEEE Electron Device Letters | - |
| dc.relation.index | SCI급, SCOPUS 등재논문 | - |
| dc.relation.sci | SCI | - |
| dc.collections.name | Journal Papers | - |
| dc.type.rims | ART | - |
| dc.contributor.localauthor | Hwang, H | - |
| dc.contributor.nonIdAuthor | Liu, X | - |
| dc.contributor.nonIdAuthor | Sadaf, SM | - |
| dc.contributor.nonIdAuthor | Park, S | - |
| dc.contributor.nonIdAuthor | Kim, S | - |
| dc.contributor.nonIdAuthor | Cha, E | - |
| dc.contributor.nonIdAuthor | Lee, D | - |
| dc.contributor.nonIdAuthor | Jung, GY | - |
| dc.identifier.wosid | 000314173200029 | - |
| dc.date.tcdate | 2019-01-01 | - |
| dc.citation.endPage | 237 | - |
| dc.citation.number | 2 | - |
| dc.citation.startPage | 235 | - |
| dc.citation.title | IEEE Electron Device Letters | - |
| dc.citation.volume | 34 | - |
| dc.identifier.scopusid | 2-s2.0-84873055776 | - |
| dc.description.journalClass | 1 | - |
| dc.description.wostc | 22 | - |
| dc.description.scptc | 21 | * |
| dc.date.scptcdate | 2018-05-121 | * |
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- 황현상HWANG, HYUNSANG
- Dept of Materials Science & Enginrg