Highly reliable resistive switching without an initial forming operation by defect engineering
SCIE
SCOPUS
- Title
- Highly reliable resistive switching without an initial forming operation by defect engineering
- Authors
- Lee, S; Lee, D; Woo, J; Cha, E; Park, J; Song, J; Moon, K; Koo, Y; Attari, B; Tamanna, N; Haque, MS; Hwang, H
- Date Issued
- 2013-12
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Abstract
- The effects of stack and defect engineering of metal-oxide layers on resistive switching uniformity were investigated to obtain resistive random access memory (ReRAM) with excellent switching reliability. Uniform switching, parameters, such as set voltage (V-set), reset voltage (V-reset), low-resistance state, high-resistance state, and retention characteristics, were significantly improved by stack and defect engineering. Furthermore, the initial forming operation, which is a nuisance, was removed to realize cross-point ReRAM.
- Keywords
- Defect engineering; reliability; resistive switching; retention; MEMORY
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/14929
- DOI
- 10.1109/LED.2013.2284916
- ISSN
- 0741-3106
- Article Type
- Article
- Citation
- IEEE Electron Device Letters, vol. 34, no. 12, page. 1515 - 1517, 2013-12
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- There are no files associated with this item.
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