Open Access System for Information Sharing

Login Library

 

Article
Cited 17 time in webofscience Cited 19 time in scopus
Metadata Downloads

Highly reliable resistive switching without an initial forming operation by defect engineering SCIE SCOPUS

Title
Highly reliable resistive switching without an initial forming operation by defect engineering
Authors
Lee, SLee, DWoo, JCha, EPark, JSong, JMoon, KKoo, YAttari, BTamanna, NHaque, MSHwang, H
Date Issued
2013-12
Publisher
Institute of Electrical and Electronics Engineers Inc.
Abstract
The effects of stack and defect engineering of metal-oxide layers on resistive switching uniformity were investigated to obtain resistive random access memory (ReRAM) with excellent switching reliability. Uniform switching, parameters, such as set voltage (V-set), reset voltage (V-reset), low-resistance state, high-resistance state, and retention characteristics, were significantly improved by stack and defect engineering. Furthermore, the initial forming operation, which is a nuisance, was removed to realize cross-point ReRAM.
Keywords
Defect engineering; reliability; resistive switching; retention; MEMORY
URI
https://oasis.postech.ac.kr/handle/2014.oak/14929
DOI
10.1109/LED.2013.2284916
ISSN
0741-3106
Article Type
Article
Citation
IEEE Electron Device Letters, vol. 34, no. 12, page. 1515 - 1517, 2013-12
Files in This Item:
There are no files associated with this item.

qr_code

  • mendeley

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher

황현상HWANG, HYUNSANG
Dept of Materials Science & Enginrg
Read more

Views & Downloads

Browse