Vertically Stacked ReRAM Composed of a Bidirectional Selector and CB-RAM for Cross-point Array Applications

Abstract

In this letter, we discuss our technique for fabricating a vertically stacked ReRAM device composed of one selector and one resistor (1S-1R). We demonstrate that the nanoscale via-hole structure and 1-kb array architecture of selector device exhibit higher current density (similar to 10(7) A/cm(2)) and reliability, and we introduce bipolar resistive switching element-a conductive-bridge RAM that can be stacked on top of the selector device. The resulting integrated 1S-1R device performs robust bipolar switching operations and significantly reduces the leakage current in cross-point applications.