Vertically Stacked ReRAM Composed of a Bidirectional Selector and CB-RAM for Cross-point Array Applications
SCIE
SCOPUS
- Title
- Vertically Stacked ReRAM Composed of a Bidirectional Selector and CB-RAM for Cross-point Array Applications
- Authors
- Woo, J; Lee, D; Cha, E; Lee, S; Park, S; Hwang, H
- Date Issued
- 2013-12
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Abstract
- In this letter, we discuss our technique for fabricating a vertically stacked ReRAM device composed of one selector and one resistor (1S-1R). We demonstrate that the nanoscale via-hole structure and 1-kb array architecture of selector device exhibit higher current density (similar to 10(7) A/cm(2)) and reliability, and we introduce bipolar resistive switching element-a conductive-bridge RAM that can be stacked on top of the selector device. The resulting integrated 1S-1R device performs robust bipolar switching operations and significantly reduces the leakage current in cross-point applications.
- Keywords
- Cross-point array architecture; one selector and one resistor (1S-1R); selector device; MEMORY
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/14928
- DOI
- 10.1109/LED.2013.2285583
- ISSN
- 0741-3106
- Article Type
- Article
- Citation
- IEEE Electron Device Letters, vol. 34, no. 12, page. 1512 - 1514, 2013-12
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- There are no files associated with this item.
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