Control of Cu Conductive Filament in Complementary Atom Switch for Cross-Point Selector Device Application
SCIE
SCOPUS
- Title
- Control of Cu Conductive Filament in Complementary Atom Switch for Cross-Point Selector Device Application
- Authors
- Woo, J; Lee, D; Cha, E; Lee, S; Park, S; Hwang, H
- Date Issued
- 2014-01
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Abstract
- We present a novel approach to realize bidirectional/bipolar current-voltage characteristics for cross-point selector device application. These utilize the instability of Cu ions in filament state for switch elements. The conductive filament instability was controlled by the compliance current with which the filament was formed. For in-situ control of the device, a complementary atom switch concept was implemented. The proposed device presents another attractive selector among the field of bidirectional selectors with the unique attributes such as the extremely low leakage current and the exponentially increased conduction behavior.
- Keywords
- Selector device; cross-point array memory; access device; atom switch
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/14927
- DOI
- 10.1109/LED.2013.2290120
- ISSN
- 0741-3106
- Article Type
- Article
- Citation
- IEEE Electron Device Letters, vol. 35, no. 1, page. 60 - 62, 2014-01
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- There are no files associated with this item.
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