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Control of Cu Conductive Filament in Complementary Atom Switch for Cross-Point Selector Device Application SCIE SCOPUS

Title
Control of Cu Conductive Filament in Complementary Atom Switch for Cross-Point Selector Device Application
Authors
Woo, JLee, DCha, ELee, SPark, SHwang, H
Date Issued
2014-01
Publisher
Institute of Electrical and Electronics Engineers Inc.
Abstract
We present a novel approach to realize bidirectional/bipolar current-voltage characteristics for cross-point selector device application. These utilize the instability of Cu ions in filament state for switch elements. The conductive filament instability was controlled by the compliance current with which the filament was formed. For in-situ control of the device, a complementary atom switch concept was implemented. The proposed device presents another attractive selector among the field of bidirectional selectors with the unique attributes such as the extremely low leakage current and the exponentially increased conduction behavior.
Keywords
Selector device; cross-point array memory; access device; atom switch
URI
https://oasis.postech.ac.kr/handle/2014.oak/14927
DOI
10.1109/LED.2013.2290120
ISSN
0741-3106
Article Type
Article
Citation
IEEE Electron Device Letters, vol. 35, no. 1, page. 60 - 62, 2014-01
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황현상HWANG, HYUNSANG
Dept of Materials Science & Enginrg
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