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Cited 27 time in webofscience Cited 31 time in scopus
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dc.contributor.authorWoo, J-
dc.contributor.authorLee, D-
dc.contributor.authorCha, E-
dc.contributor.authorLee, S-
dc.contributor.authorPark, S-
dc.contributor.authorHwang, H-
dc.date.accessioned2016-03-31T08:16:04Z-
dc.date.available2016-03-31T08:16:04Z-
dc.date.created2014-03-03-
dc.date.issued2014-01-
dc.identifier.issn0741-3106-
dc.identifier.other2014-OAK-0000029034-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/14927-
dc.description.abstractWe present a novel approach to realize bidirectional/bipolar current-voltage characteristics for cross-point selector device application. These utilize the instability of Cu ions in filament state for switch elements. The conductive filament instability was controlled by the compliance current with which the filament was formed. For in-situ control of the device, a complementary atom switch concept was implemented. The proposed device presents another attractive selector among the field of bidirectional selectors with the unique attributes such as the extremely low leakage current and the exponentially increased conduction behavior.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherInstitute of Electrical and Electronics Engineers Inc.-
dc.relation.isPartOfIEEE Electron Device Letters-
dc.subjectSelector device-
dc.subjectcross-point array memory-
dc.subjectaccess device-
dc.subjectatom switch-
dc.titleControl of Cu Conductive Filament in Complementary Atom Switch for Cross-Point Selector Device Application-
dc.typeArticle-
dc.contributor.college신소재공학과-
dc.identifier.doi10.1109/LED.2013.2290120-
dc.author.googleWoo, J-
dc.author.googleLee, D-
dc.author.googleCha, E-
dc.author.googleLee, S-
dc.author.googlePark, S-
dc.author.googleHwang, H-
dc.relation.volume35-
dc.relation.issue1-
dc.relation.startpage60-
dc.relation.lastpage62-
dc.contributor.id10079928-
dc.relation.journalIEEE Electron Device Letters-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationIEEE Electron Device Letters, v.35, no.1, pp.60 - 62-
dc.identifier.wosid000329061300020-
dc.date.tcdate2019-01-01-
dc.citation.endPage62-
dc.citation.number1-
dc.citation.startPage60-
dc.citation.titleIEEE Electron Device Letters-
dc.citation.volume35-
dc.contributor.affiliatedAuthorHwang, H-
dc.identifier.scopusid2-s2.0-84891555378-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc9-
dc.description.scptc9*
dc.date.scptcdate2018-05-121*
dc.type.docTypeArticle-
dc.subject.keywordAuthorSelector device-
dc.subject.keywordAuthorcross-point array memory-
dc.subject.keywordAuthoraccess device-
dc.subject.keywordAuthoratom switch-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-

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