DC Field | Value | Language |
---|---|---|
dc.contributor.author | Woo, J | - |
dc.contributor.author | Lee, D | - |
dc.contributor.author | Cha, E | - |
dc.contributor.author | Lee, S | - |
dc.contributor.author | Park, S | - |
dc.contributor.author | Hwang, H | - |
dc.date.accessioned | 2016-03-31T08:16:04Z | - |
dc.date.available | 2016-03-31T08:16:04Z | - |
dc.date.created | 2014-03-03 | - |
dc.date.issued | 2014-01 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.other | 2014-OAK-0000029034 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/14927 | - |
dc.description.abstract | We present a novel approach to realize bidirectional/bipolar current-voltage characteristics for cross-point selector device application. These utilize the instability of Cu ions in filament state for switch elements. The conductive filament instability was controlled by the compliance current with which the filament was formed. For in-situ control of the device, a complementary atom switch concept was implemented. The proposed device presents another attractive selector among the field of bidirectional selectors with the unique attributes such as the extremely low leakage current and the exponentially increased conduction behavior. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
dc.relation.isPartOf | IEEE Electron Device Letters | - |
dc.subject | Selector device | - |
dc.subject | cross-point array memory | - |
dc.subject | access device | - |
dc.subject | atom switch | - |
dc.title | Control of Cu Conductive Filament in Complementary Atom Switch for Cross-Point Selector Device Application | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1109/LED.2013.2290120 | - |
dc.author.google | Woo, J | - |
dc.author.google | Lee, D | - |
dc.author.google | Cha, E | - |
dc.author.google | Lee, S | - |
dc.author.google | Park, S | - |
dc.author.google | Hwang, H | - |
dc.relation.volume | 35 | - |
dc.relation.issue | 1 | - |
dc.relation.startpage | 60 | - |
dc.relation.lastpage | 62 | - |
dc.contributor.id | 10079928 | - |
dc.relation.journal | IEEE Electron Device Letters | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE Electron Device Letters, v.35, no.1, pp.60 - 62 | - |
dc.identifier.wosid | 000329061300020 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 62 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 60 | - |
dc.citation.title | IEEE Electron Device Letters | - |
dc.citation.volume | 35 | - |
dc.contributor.affiliatedAuthor | Hwang, H | - |
dc.identifier.scopusid | 2-s2.0-84891555378 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 9 | - |
dc.description.scptc | 9 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Selector device | - |
dc.subject.keywordAuthor | cross-point array memory | - |
dc.subject.keywordAuthor | access device | - |
dc.subject.keywordAuthor | atom switch | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
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