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Polarity and Air-Stability Transitions in Field-Effect Transistors Based on Fullerenes with Different Solubilizing Groups SCIE SCOPUS

Title
Polarity and Air-Stability Transitions in Field-Effect Transistors Based on Fullerenes with Different Solubilizing Groups
Authors
Hojeong YuHan-Hee ChoChul-Hee ChoKi-Hyun KimDong Yeong KimBumjoon J. KimOh, JH
Date Issued
2013-06-12
Publisher
American Chemical Society
Abstract
A series of o-xylene and indene fullerene derivatives with varying frontier molecular orbital energy levels were utilized for assessing the impact of the number of solubilizing groups on the electrical performance of fullerene-based organic-field-effect transistors (OFETs). The charge-carrier polarity was found to be strongly dependent upon the energy levels of fullerene derivatives. The o-xylene C-60 monoadduct (OXCMA) and indene C-60 monoadduct (ICMA) exhibited unipolar n-channel behaviors with high electron mobilities, whereas the bis- and trisadducts of indene and o-xylene C-60 derivatives showed ambipolar charge transport. The OXCMA OFETs fabricated by solution shearing and molecular n-type doping showed an electron mobility of up to 2.28 cm(2) V-1 s(-1), which is one of the highest electron mobilities obtained from solution processed fullerene thin-film devices. Our findings systematically demonstrate the relationship between the energy level and charge carrier polarity and provide insight into molecular design and processing strategies toward high-performance fullerene-based OFETs.
Keywords
fullerene; organic-field-effect transistor; solubilizing groups; n-type doping; molecular design; THIN-FILM TRANSISTORS; POLYMER SOLAR-CELLS; SUBSTITUTED C-60 DERIVATIVES; OPEN-CIRCUIT VOLTAGE; N-TYPE DOPANT; ORGANIC SEMICONDUCTORS; CHARGE-TRANSPORT; MATERIALS DESIGN; PERFORMANCE; MOBILITY
URI
https://oasis.postech.ac.kr/handle/2014.oak/14395
DOI
10.1021/AM400618R
ISSN
1944-8244
Article Type
Article
Citation
ACS APPLIED MATERIALS & INTERFACES, vol. 5, no. 11, page. 4865 - 4871, 2013-06-12
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오준학OH, JOON HAK
Dept. of Chemical Enginrg
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