DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hojeong Yu | - |
dc.contributor.author | Han-Hee Cho | - |
dc.contributor.author | Chul-Hee Cho | - |
dc.contributor.author | Ki-Hyun Kim | - |
dc.contributor.author | Dong Yeong Kim | - |
dc.contributor.author | Bumjoon J. Kim | - |
dc.contributor.author | Oh, JH | - |
dc.date.accessioned | 2016-03-31T08:01:37Z | - |
dc.date.available | 2016-03-31T08:01:37Z | - |
dc.date.created | 2014-09-29 | - |
dc.date.issued | 2013-06-12 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.other | 2013-OAK-0000030310 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/14395 | - |
dc.description.abstract | A series of o-xylene and indene fullerene derivatives with varying frontier molecular orbital energy levels were utilized for assessing the impact of the number of solubilizing groups on the electrical performance of fullerene-based organic-field-effect transistors (OFETs). The charge-carrier polarity was found to be strongly dependent upon the energy levels of fullerene derivatives. The o-xylene C-60 monoadduct (OXCMA) and indene C-60 monoadduct (ICMA) exhibited unipolar n-channel behaviors with high electron mobilities, whereas the bis- and trisadducts of indene and o-xylene C-60 derivatives showed ambipolar charge transport. The OXCMA OFETs fabricated by solution shearing and molecular n-type doping showed an electron mobility of up to 2.28 cm(2) V-1 s(-1), which is one of the highest electron mobilities obtained from solution processed fullerene thin-film devices. Our findings systematically demonstrate the relationship between the energy level and charge carrier polarity and provide insight into molecular design and processing strategies toward high-performance fullerene-based OFETs. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | American Chemical Society | - |
dc.relation.isPartOf | ACS APPLIED MATERIALS & INTERFACES | - |
dc.subject | fullerene | - |
dc.subject | organic-field-effect transistor | - |
dc.subject | solubilizing groups | - |
dc.subject | n-type doping | - |
dc.subject | molecular design | - |
dc.subject | THIN-FILM TRANSISTORS | - |
dc.subject | POLYMER SOLAR-CELLS | - |
dc.subject | SUBSTITUTED C-60 DERIVATIVES | - |
dc.subject | OPEN-CIRCUIT VOLTAGE | - |
dc.subject | N-TYPE DOPANT | - |
dc.subject | ORGANIC SEMICONDUCTORS | - |
dc.subject | CHARGE-TRANSPORT | - |
dc.subject | MATERIALS DESIGN | - |
dc.subject | PERFORMANCE | - |
dc.subject | MOBILITY | - |
dc.title | Polarity and Air-Stability Transitions in Field-Effect Transistors Based on Fullerenes with Different Solubilizing Groups | - |
dc.type | Article | - |
dc.contributor.college | 화학공학과 | - |
dc.identifier.doi | 10.1021/AM400618R | - |
dc.author.google | Yu, H | - |
dc.author.google | Cho, HH | - |
dc.author.google | Cho, CH | - |
dc.author.google | Kim, KH | - |
dc.author.google | Kim, DY | - |
dc.author.google | Kim, BJ | - |
dc.author.google | Oh, JH | - |
dc.relation.volume | 5 | - |
dc.relation.issue | 11 | - |
dc.relation.startpage | 4865 | - |
dc.relation.lastpage | 4871 | - |
dc.contributor.id | 10165224 | - |
dc.relation.journal | ACS APPLIED MATERIALS & INTERFACES | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.5, no.11, pp.4865 - 4871 | - |
dc.identifier.wosid | 000320484000052 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 4871 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 4865 | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 5 | - |
dc.contributor.affiliatedAuthor | Oh, JH | - |
dc.identifier.scopusid | 2-s2.0-84879101347 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 21 | - |
dc.description.scptc | 20 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | OPEN-CIRCUIT VOLTAGE | - |
dc.subject.keywordPlus | N-TYPE DOPANT | - |
dc.subject.keywordPlus | ORGANIC SEMICONDUCTOR | - |
dc.subject.keywordPlus | MATERIALS DESIGN | - |
dc.subject.keywordPlus | POLYMER | - |
dc.subject.keywordPlus | C-60 | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | CELLS | - |
dc.subject.keywordAuthor | fullerene | - |
dc.subject.keywordAuthor | organic-field-effect transistor | - |
dc.subject.keywordAuthor | solubilizing groups | - |
dc.subject.keywordAuthor | n-type doping | - |
dc.subject.keywordAuthor | molecular design | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
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