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Cited 27 time in webofscience Cited 28 time in scopus
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dc.contributor.authorHojeong Yu-
dc.contributor.authorHan-Hee Cho-
dc.contributor.authorChul-Hee Cho-
dc.contributor.authorKi-Hyun Kim-
dc.contributor.authorDong Yeong Kim-
dc.contributor.authorBumjoon J. Kim-
dc.contributor.authorOh, JH-
dc.date.accessioned2016-03-31T08:01:37Z-
dc.date.available2016-03-31T08:01:37Z-
dc.date.created2014-09-29-
dc.date.issued2013-06-12-
dc.identifier.issn1944-8244-
dc.identifier.other2013-OAK-0000030310-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/14395-
dc.description.abstractA series of o-xylene and indene fullerene derivatives with varying frontier molecular orbital energy levels were utilized for assessing the impact of the number of solubilizing groups on the electrical performance of fullerene-based organic-field-effect transistors (OFETs). The charge-carrier polarity was found to be strongly dependent upon the energy levels of fullerene derivatives. The o-xylene C-60 monoadduct (OXCMA) and indene C-60 monoadduct (ICMA) exhibited unipolar n-channel behaviors with high electron mobilities, whereas the bis- and trisadducts of indene and o-xylene C-60 derivatives showed ambipolar charge transport. The OXCMA OFETs fabricated by solution shearing and molecular n-type doping showed an electron mobility of up to 2.28 cm(2) V-1 s(-1), which is one of the highest electron mobilities obtained from solution processed fullerene thin-film devices. Our findings systematically demonstrate the relationship between the energy level and charge carrier polarity and provide insight into molecular design and processing strategies toward high-performance fullerene-based OFETs.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherAmerican Chemical Society-
dc.relation.isPartOfACS APPLIED MATERIALS & INTERFACES-
dc.subjectfullerene-
dc.subjectorganic-field-effect transistor-
dc.subjectsolubilizing groups-
dc.subjectn-type doping-
dc.subjectmolecular design-
dc.subjectTHIN-FILM TRANSISTORS-
dc.subjectPOLYMER SOLAR-CELLS-
dc.subjectSUBSTITUTED C-60 DERIVATIVES-
dc.subjectOPEN-CIRCUIT VOLTAGE-
dc.subjectN-TYPE DOPANT-
dc.subjectORGANIC SEMICONDUCTORS-
dc.subjectCHARGE-TRANSPORT-
dc.subjectMATERIALS DESIGN-
dc.subjectPERFORMANCE-
dc.subjectMOBILITY-
dc.titlePolarity and Air-Stability Transitions in Field-Effect Transistors Based on Fullerenes with Different Solubilizing Groups-
dc.typeArticle-
dc.contributor.college화학공학과-
dc.identifier.doi10.1021/AM400618R-
dc.author.googleYu, H-
dc.author.googleCho, HH-
dc.author.googleCho, CH-
dc.author.googleKim, KH-
dc.author.googleKim, DY-
dc.author.googleKim, BJ-
dc.author.googleOh, JH-
dc.relation.volume5-
dc.relation.issue11-
dc.relation.startpage4865-
dc.relation.lastpage4871-
dc.contributor.id10165224-
dc.relation.journalACS APPLIED MATERIALS & INTERFACES-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationACS APPLIED MATERIALS & INTERFACES, v.5, no.11, pp.4865 - 4871-
dc.identifier.wosid000320484000052-
dc.date.tcdate2019-01-01-
dc.citation.endPage4871-
dc.citation.number11-
dc.citation.startPage4865-
dc.citation.titleACS APPLIED MATERIALS & INTERFACES-
dc.citation.volume5-
dc.contributor.affiliatedAuthorOh, JH-
dc.identifier.scopusid2-s2.0-84879101347-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc21-
dc.description.scptc20*
dc.date.scptcdate2018-05-121*
dc.type.docTypeArticle-
dc.subject.keywordPlusTHIN-FILM TRANSISTORS-
dc.subject.keywordPlusOPEN-CIRCUIT VOLTAGE-
dc.subject.keywordPlusN-TYPE DOPANT-
dc.subject.keywordPlusORGANIC SEMICONDUCTOR-
dc.subject.keywordPlusMATERIALS DESIGN-
dc.subject.keywordPlusPOLYMER-
dc.subject.keywordPlusC-60-
dc.subject.keywordPlusTRANSPORT-
dc.subject.keywordPlusCELLS-
dc.subject.keywordAuthorfullerene-
dc.subject.keywordAuthororganic-field-effect transistor-
dc.subject.keywordAuthorsolubilizing groups-
dc.subject.keywordAuthorn-type doping-
dc.subject.keywordAuthormolecular design-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-

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오준학OH, JOON HAK
Dept. of Chemical Enginrg
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