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dc.contributor.authorLee, Dko
dc.contributor.authorWoo, Jko
dc.contributor.authorCha, Eko
dc.contributor.authorLee, Sko
dc.contributor.authorHwang, Hko
dc.date.available2016-03-31T07:23:57Z-
dc.date.created2015-02-26-
dc.date.issued2014-09-
dc.identifier.citationJOURNAL OF ELECTRONIC MATERIALS, v.43, no.9, pp.3635 - 3639-
dc.identifier.issn0361-5235-
dc.identifier.other2014-OAK-0000032335-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/13589-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherSpringer-
dc.subjectReRAM-
dc.subjectconducting filament-
dc.subjecthigh-pressure hydrogen annealing-
dc.subjectfilament overformation-
dc.subjectTECHNOLOGY-
dc.titleEffects of High-Pressure Hydrogen Annealing on the Formation of Conducting Filaments in Filament-Type Resistive Random-Access Memory-
dc.typeArticle-
dc.contributor.college신소재공학과-
dc.identifier.doi10.1007/S11664-014-3265-4-
dc.author.googleLee, D-
dc.author.googleWoo, J-
dc.author.googleCha, E-
dc.author.googleLee, S-
dc.author.googleHwang, H-
dc.relation.volume43-
dc.relation.issue9-
dc.relation.startpage3635-
dc.relation.lastpage3639-
dc.contributor.id10079928-
dc.publisher.locationUS-
dc.relation.journalJOURNAL OF ELECTRONIC MATERIALS-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.contributor.localauthorHwang, H-
dc.contributor.nonIdAuthorLee, D-
dc.contributor.nonIdAuthorWoo, J-
dc.contributor.nonIdAuthorCha, E-
dc.contributor.nonIdAuthorLee, S-
dc.identifier.wosid000340363600074-
dc.date.tcdate2019-01-01-
dc.citation.endPage3639-
dc.citation.number9-
dc.citation.startPage3635-
dc.citation.titleJOURNAL OF ELECTRONIC MATERIALS-
dc.citation.volume43-
dc.identifier.scopusid2-s2.0-84906316931-
dc.description.journalClass1-
dc.description.wostc1-
dc.description.scptc1*
dc.date.scptcdate2018-05-121*

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황현상HWANG, HYUNSANG
Dept of Materials Science & Enginrg
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