DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, D | - |
dc.contributor.author | Woo, J | - |
dc.contributor.author | Cha, E | - |
dc.contributor.author | Lee, S | - |
dc.contributor.author | Hwang, H | - |
dc.date.accessioned | 2016-03-31T07:23:57Z | - |
dc.date.available | 2016-03-31T07:23:57Z | - |
dc.date.created | 2015-02-26 | - |
dc.date.issued | 2014-09 | - |
dc.identifier.issn | 0361-5235 | - |
dc.identifier.other | 2014-OAK-0000032335 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/13589 | - |
dc.description.abstract | Accurate control of formation of conducting filaments is one of the most important challenges to solve in order to achieve improved switching characteristics in resistive random-access memory (ReRAM). In this regard, high-pressure hydrogen annealing (HPHA) can be an effective method for accurate control because it can induce in the ReRAM the formation of oxygen vacancies and OH- bonds, the main factors that influence conducting filament formation. Among the various switching processes, the forming process, which represents the first formation of a conducting filament, was investigated to clarify the effects of HPHA on the formation of conducting filaments. HPHA-treated samples were found to exhibit more accurately controlled resistance of the conducting filament, owing to accurate control of the forming process, compared with samples not treated by HPHA. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | Springer | - |
dc.relation.isPartOf | JOURNAL OF ELECTRONIC MATERIALS | - |
dc.subject | ReRAM | - |
dc.subject | conducting filament | - |
dc.subject | high-pressure hydrogen annealing | - |
dc.subject | filament overformation | - |
dc.subject | TECHNOLOGY | - |
dc.title | Effects of High-Pressure Hydrogen Annealing on the Formation of Conducting Filaments in Filament-Type Resistive Random-Access Memory | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1007/S11664-014-3265-4 | - |
dc.author.google | Lee, D | - |
dc.author.google | Woo, J | - |
dc.author.google | Cha, E | - |
dc.author.google | Lee, S | - |
dc.author.google | Hwang, H | - |
dc.relation.volume | 43 | - |
dc.relation.issue | 9 | - |
dc.relation.startpage | 3635 | - |
dc.relation.lastpage | 3639 | - |
dc.contributor.id | 10079928 | - |
dc.relation.journal | JOURNAL OF ELECTRONIC MATERIALS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF ELECTRONIC MATERIALS, v.43, no.9, pp.3635 - 3639 | - |
dc.identifier.wosid | 000340363600074 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 3639 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 3635 | - |
dc.citation.title | JOURNAL OF ELECTRONIC MATERIALS | - |
dc.citation.volume | 43 | - |
dc.contributor.affiliatedAuthor | Hwang, H | - |
dc.identifier.scopusid | 2-s2.0-84906316931 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 1 | - |
dc.description.scptc | 1 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | ReRAM | - |
dc.subject.keywordAuthor | conducting filament | - |
dc.subject.keywordAuthor | high-pressure hydrogen annealing | - |
dc.subject.keywordAuthor | filament overformation | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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