A nitrogen-treated memristive device for tunable electronic synapses
SCIE
SCOPUS
- Title
- A nitrogen-treated memristive device for tunable electronic synapses
- Authors
- Park, S; Siddik, M; Noh, J; Lee, D; Moon, K; Woo, J; Lee, BH; Hwang, H
- Date Issued
- 2014-10
- Publisher
- Institute of Physics Publishing (IOP)
- Abstract
- We propose a redox-based tunable memristive device for neuromorphic applications. First, we report the implementation of a 150 nm Pt/TiNx/Pr0.7Ca0.3MnO3(PCMO)/Pt memristive device with multi-level storage capability for use as an electronic synapse. In addition, we investigate the tunable memristive characteristics on Schottky barrier modulation. The Schottky barrier was formed by the interface between a TiNx electrode and a p-type PCMO. By changing the nitrogen gas flow during the reactive sputter deposition of the TiNx electrode, we have successfully engineered the Schottky barrier height, resulting in the modulation of the current and demonstrating the feasibility of tunable electronic synapses.
- Keywords
- memristive device; neuromorphic device; resistive device; WORK FUNCTION; SYSTEMS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/13588
- DOI
- 10.1088/0268-1242/29/10/104006
- ISSN
- 0268-1242
- Article Type
- Article
- Citation
- Semiconductor Science and Technology, vol. 29, no. 10, page. 104006 - 104010, 2014-10
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- There are no files associated with this item.
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