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Cited 8 time in webofscience Cited 9 time in scopus
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dc.contributor.authorPark, Sko
dc.contributor.authorSiddik, Mko
dc.contributor.authorNoh, Jko
dc.contributor.authorLee, Dko
dc.contributor.authorMoon, Kko
dc.contributor.authorWoo, Jko
dc.contributor.authorLee, BHko
dc.contributor.authorHwang, Hko
dc.date.available2016-03-31T07:23:54Z-
dc.date.created2015-02-26-
dc.date.issued2014-10-
dc.identifier.citationSemiconductor Science and Technology, v.29, no.10, pp.104006 - 104010-
dc.identifier.issn0268-1242-
dc.identifier.other2014-OAK-0000032337-
dc.identifier.urihttp://oasis.postech.ac.kr/handle/2014.oak/13588-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherInstitute of Physics Publishing (IOP)-
dc.subjectmemristive device-
dc.subjectneuromorphic device-
dc.subjectresistive device-
dc.subjectWORK FUNCTION-
dc.subjectSYSTEMS-
dc.titleA nitrogen-treated memristive device for tunable electronic synapses-
dc.typeArticle-
dc.contributor.college신소재공학과-
dc.identifier.doi10.1088/0268-1242/29/10/104006-
dc.author.googlePark, S-
dc.author.googleSiddik, M-
dc.author.googleNoh, J-
dc.author.googleLee, D-
dc.author.googleMoon, K-
dc.author.googleWoo, J-
dc.author.googleLee, BH-
dc.author.googleHwang, H-
dc.relation.volume29-
dc.relation.issue10-
dc.relation.startpage104006-
dc.relation.lastpage104010-
dc.contributor.id10079928-
dc.publisher.locationUK-
dc.relation.journalSemiconductor Science and Technology-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.contributor.localauthorHwang, H-
dc.contributor.nonIdAuthorPark, S-
dc.contributor.nonIdAuthorSiddik, M-
dc.contributor.nonIdAuthorNoh, J-
dc.contributor.nonIdAuthorLee, D-
dc.contributor.nonIdAuthorMoon, K-
dc.contributor.nonIdAuthorWoo, J-
dc.contributor.nonIdAuthorLee, BH-
dc.identifier.wosid000342389600007-
dc.date.tcdate2019-01-01-
dc.citation.endPage104010-
dc.citation.number10-
dc.citation.startPage104006-
dc.citation.titleSemiconductor Science and Technology-
dc.citation.volume29-
dc.identifier.scopusid2-s2.0-84907193005-
dc.description.journalClass1-
dc.description.wostc5-
dc.description.scptc4*
dc.date.scptcdate2018-05-121*

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황현상HWANG, HYUNSANG
Dept of Materials Science & Enginrg
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