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Two-terminal Random Access Memory based on Schottky Barrier
- Title
- Two-terminal Random Access Memory based on Schottky Barrier
- Authors
- CHO, HYEONSU; KIM, HYANGWOO; BAEK, CHANG KI
- Date Issued
- 2021-07-29
- Publisher
- IEEE
- Article Type
- Conference
- Citation
- The 21st IEEE International Conference on Nanotechnology (IEEE-NANO 2021), 2021-07-29
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Related Researcher
- 백창기BAEK, CHANG KI
- Dept. Convergence IT Engineering