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dc.contributor.authorCHO, HYEONSU-
dc.contributor.authorKIM, HYANGWOO-
dc.contributor.authorBAEK, CHANG KI-
dc.date.accessioned2024-09-24T06:23:49Z-
dc.date.available2024-09-24T06:23:49Z-
dc.date.created2024-09-24-
dc.date.issued2021-07-29-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/124248-
dc.languageEnglish-
dc.publisherIEEE-
dc.relation.isPartOfThe 21st IEEE International Conference on Nanotechnology (IEEE-NANO 2021)-
dc.titleTwo-terminal Random Access Memory based on Schottky Barrier-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitationThe 21st IEEE International Conference on Nanotechnology (IEEE-NANO 2021)-
dc.citation.conferenceDate2021-07-28-
dc.citation.conferencePlaceCN-
dc.citation.titleThe 21st IEEE International Conference on Nanotechnology (IEEE-NANO 2021)-
dc.contributor.affiliatedAuthorCHO, HYEONSU-
dc.contributor.affiliatedAuthorKIM, HYANGWOO-
dc.contributor.affiliatedAuthorBAEK, CHANG KI-
dc.description.journalClass1-
dc.description.journalClass1-

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백창기BAEK, CHANG KI
Dept. Convergence IT Engineering
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