Chemisorption of acetic acid on Si(100)-2x1 at room temperature
SCIE
SCOPUS
- Title
- Chemisorption of acetic acid on Si(100)-2x1 at room temperature
- Authors
- Lee, HK; Kim, KJ; Han, JH; Kang, TH; Chung, JW; Kim, B
- Date Issued
- 2008-03
- Publisher
- AMER PHYSICAL SOC
- Abstract
- We have investigated adsorption of acetic acid on Si (100)-2x1 at room temperature using high-resolution photoemission spectroscopy and near edge x-ray adsorption fine structure (NEXAFS) measurements in the partial electron yield mode. At room temperature, an acetic-acid molecule is found to chemisorb on Si (100)-2x1 surface through the formation of the O-H dissociation structure. NEXAFS was conducted to characterize the adsorption geometry of acetic acid on Si (100). The pi* orbital of the C = O bond shows a good angle dependence in carbon K-edge NEXAFS spectra, and we estimate the adsorption angle between chemisorbed acetic acid of C = O bond and the Si (100) surface normal as similar to 41 degrees +/- 2 degrees using an analytical solution of NEXAFS intensity.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/12191
- DOI
- 10.1103/PhysRevB.77.115324
- ISSN
- 1098-0121
- Article Type
- Article
- Citation
- PHYSICAL REVIEW B, vol. 77, no. 11, 2008-03
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