Chemisorption of acetic acid on Si(100)-2x1 at room temperature

Abstract

We have investigated adsorption of acetic acid on Si (100)-2x1 at room temperature using high-resolution photoemission spectroscopy and near edge x-ray adsorption fine structure (NEXAFS) measurements in the partial electron yield mode. At room temperature, an acetic-acid molecule is found to chemisorb on Si (100)-2x1 surface through the formation of the O-H dissociation structure. NEXAFS was conducted to characterize the adsorption geometry of acetic acid on Si (100). The pi* orbital of the C = O bond shows a good angle dependence in carbon K-edge NEXAFS spectra, and we estimate the adsorption angle between chemisorbed acetic acid of C = O bond and the Si (100) surface normal as similar to 41 degrees +/- 2 degrees using an analytical solution of NEXAFS intensity.