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Optimization of Ge Mole Fraction in Sacrificial Layers for Sub-3-nm Node Silicon Nanosheet FETs

Title
Optimization of Ge Mole Fraction in Sacrificial Layers for Sub-3-nm Node Silicon Nanosheet FETs
Authors
BAEK, ROCK HYUNSANGUK, LEEJINSU, JEONG윤준식LEE, JUNJONG임재완이승환
Date Issued
2023-03-09
Publisher
IEEE Electron Devices Technology and Manufacturing (IEEE EDTM)
URI
https://oasis.postech.ac.kr/handle/2014.oak/119854
Article Type
Conference
Citation
The 7th Electron Devices Technology and Manufacturing Conference (IEEE EDTM 2023), 2023-03-09
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백록현BAEK, ROCK HYUN
Dept of Electrical Enginrg
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