Open Access System for Information Sharing

Login Library

 

Cited 0 time in webofscience Cited 0 time in scopus
Metadata Downloads

Effect of surface treatment by (NH4)(2)S-x solution on the reduction of ohmic contact resistivity of p-type GaN

Title
Effect of surface treatment by (NH4)(2)S-x solution on the reduction of ohmic contact resistivity of p-type GaN
Authors
Kim, JKLee, JL김종규Kim, TPark, YJLee, JW
Date Issued
1999-03
Publisher
AMER INST PHYSICS
Abstract
Surface treatment using aqua regia and (NH4)(2)S-x solution in sequence prior to Pd metal deposition was effective in reducing the contact resistivity of Pd to p-type GaN. The contact resistivity was drastically decreased front 3.6 x 10(-1) to 2.9 x 10(-4) Ohm cm(2) by the treatment. The surface oxides formed on p-type GaN during epitaxial growth were effectively removed using aqua regia, and the following (NH4)(2)S-x treatment protected the surface from the formation of oxides during air exposure. The reduction of the contact resistivity is due to the direct contact of Pd to the clean surface of p-type GaN, via shift of the Fermi level to an energy level near the valence band, resulting in the reduction of the barrier height for holes at the interface of Pd/p-type GaN. (C) 1999 American Vacuum Society. [S0734-211X(99)03702-6].
Keywords
GALLIUM NITRIDE; DIODES; LAYER
URI
https://oasis.postech.ac.kr/handle/2014.oak/11246
ISSN
1071-1023
Files in This Item:
There are no files associated with this item.

qr_code

  • mendeley

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Views & Downloads

Browse