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dc.contributor.authorKim, JKen_US
dc.contributor.authorLee, JLen_US
dc.contributor.author김종규en_US
dc.contributor.authorKim, Ten_US
dc.contributor.authorPark, YJen_US
dc.contributor.authorLee, JWen_US
dc.date.accessioned2015-06-25T02:35:10Z-
dc.date.available2015-06-25T02:35:10Z-
dc.date.issued1999-03en_US
dc.identifier.citationJOURNAL OF VACUUM SCIENCE & TECHNOLOGY Ben_US
dc.identifier.citationv.17en_US
dc.identifier.citationpp.497-499en_US
dc.identifier.citationno.2en_US
dc.identifier.issn1071-1023en_US
dc.identifier.other2015-OAK-0000019072en_US
dc.identifier.urihttp://oasis.postech.ac.kr/handle/2014.oak/11246-
dc.description.abstractSurface treatment using aqua regia and (NH4)(2)S-x solution in sequence prior to Pd metal deposition was effective in reducing the contact resistivity of Pd to p-type GaN. The contact resistivity was drastically decreased front 3.6 x 10(-1) to 2.9 x 10(-4) Ohm cm(2) by the treatment. The surface oxides formed on p-type GaN during epitaxial growth were effectively removed using aqua regia, and the following (NH4)(2)S-x treatment protected the surface from the formation of oxides during air exposure. The reduction of the contact resistivity is due to the direct contact of Pd to the clean surface of p-type GaN, via shift of the Fermi level to an energy level near the valence band, resulting in the reduction of the barrier height for holes at the interface of Pd/p-type GaN. (C) 1999 American Vacuum Society. [S0734-211X(99)03702-6].en_US
dc.description.statementofresponsibilityopenen_US
dc.publisherAMER INST PHYSICSen_US
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.subjectGALLIUM NITRIDEen_US
dc.subjectDIODESen_US
dc.subjectLAYERen_US
dc.titleEffect of surface treatment by (NH4)(2)S-x solution on the reduction of ohmic contact resistivity of p-type GaNen_US
dc.contributor.college신소재공학과en_US
dc.author.googleKim, JKen_US
dc.author.googleLee, JLen_US
dc.author.googleKim, Ten_US
dc.author.googlePark, YJen_US
dc.author.googleLee, JWen_US
dc.relation.volume17en_US
dc.relation.issue2en_US
dc.relation.startpage497en_US
dc.relation.lastpage499en_US
dc.contributor.id10100864en_US
dc.publisher.locationUSen_US
dc.relation.journalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY Ben_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US

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