Conference
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | BAEK, ROCK HYUN | - |
| dc.date.accessioned | 2021-09-03T04:39:50Z | - |
| dc.date.available | 2021-09-03T04:39:50Z | - |
| dc.date.created | 2021-05-21 | - |
| dc.date.issued | 2021-01-28 | - |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/107034 | - |
| dc.publisher | 한국반도체학술대회 사무국 | - |
| dc.relation.isPartOf | 제 28회 반도체학술대회 | - |
| dc.relation.isPartOf | 제 28회 반도체학술대회 | - |
| dc.title | Si Gate-All-Around Nanosheet FET: the Key Enabler of 3nm Technology Node | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.identifier.bibliographicCitation | 제 28회 반도체학술대회 | - |
| dc.citation.conferenceDate | 2021-01-25 | - |
| dc.citation.conferencePlace | KO | - |
| dc.citation.conferencePlace | 온라인 개최 | - |
| dc.citation.title | 제 28회 반도체학술대회 | - |
| dc.contributor.affiliatedAuthor | BAEK, ROCK HYUN | - |
| dc.description.journalClass | 2 | - |
| dc.description.journalClass | 2 | - |
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- 백록현BAEK, ROCK HYUN
- Dept of Electrical Enginrg