Multi-Stage Organic Logic Circuits Using Via-Hole-Less Metal Interconnects
SCIE
SCOPUS
- Title
- Multi-Stage Organic Logic Circuits Using Via-Hole-Less Metal Interconnects
- Authors
- Park, H.; Yoo, H.; Lee, C.; Kim, J.-J.; Im, S.G.
- Date Issued
- 2020-11
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Abstract
- Multi-metal interconnection is a crucial technology for the development of large-scale integrated circuits (ICs). However, organic semiconductors are not robust enough to be compatible with conventional lithography-and-etching-based via-forming methods. Thus, an alternative metal interconnect method is required for successful organic IC implementation. In-situ patterning of a dielectric polymer through a shadow mask while depositing in vapor phase possibly addresses the issues in both solvent susceptibility and process complexity. Here we report multi-stage organic logic circuits with a multi-level metal interconnection scheme based on patterned interlayer dielectrics via vapor phase deposition. We implement an exclusive OR circuit composed of four 2-input NAND gates and three-level metal interconnections to demonstrate the potential of the proposed solvent-free metal interconnection scheme.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/105423
- DOI
- 10.1109/LED.2020.3027423
- ISSN
- 0741-3106
- Article Type
- Article
- Citation
- IEEE ELECTRON DEVICE LETTERS, vol. 41, no. 11, page. 1685 - 1687, 2020-11
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.