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KIM, JAE JOON (김재준)
Dept. of Creative IT Engin.(창의IT융합공학과)
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DESIGN:3||Multi level cell (MLC):2||Neuromorphic systems:2||Classification accuracy:2||Classification (of information):2||Level converter:1||variation:1||Inherent characteristics:1||Ion injection:1||VOLTAGE:1||process variation detection:1||synapse device:1||slew:1||Image classification:1||Pattern recognition systems:1||slewrate monitor:1||Oxygen vacancies:1||Neural network hardware:1||Pattern Recognition accuracies:1||ultralow voltage operation:1||Tantalum compounds:1||Resistive random access memory (rram):1||TaOx:1||Metals:1||SRAM:1||ENHANCEMENT:1||subthreshold logic:1||NOISE MARGIN CRITERIA:1||Image enhancement:1||Conductivebridging RAM (CBRAM):1||Capacitive coupling:1||subthreshold operation:1||LOGICCIRCUITS:1||Pattern recognition:1||RRAM:1||Metal ions:1||Device engineering:1||synaptic device:1||writeability:1||SCHEME:1||CMOS:1||DELAY:1||Process variation compensation:1||Random access storage:1||
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