Scaling of Al2O3 dielectric for graphene field-effect transistors
SCOPUS
- Title
- Scaling of Al2O3 dielectric for graphene field-effect transistors
- Authors
- KIM, SEYOUNG
- Date Issued
- 2012-02-27
- Publisher
- Applied Physics Letters
- Abstract
- We investigate the scaling of Al2O3 dielectric on graphene by atomic layer deposition (ALD) using ultra-thin, oxidized Ti and Al films as nucleation layers. We show that the nucleation layer significantly impacts the dielectric constant (k) and morphology of the ALD Al2O3, yielding k = 5.5 and k = 12.7 for Al and Ti nucleation layers, respectively. Transmission electron microscopy shows that Al2O3 grown using the Ti interface is partially crystalline, while Al2O3 grown on Al is amorphous. Using a spatially uniform 0.6 nm-thick Ti nucleation layer, we demonstrate graphene field-effect transistors with top dielectric stacks as thin as 2.6 nm.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/103392
- DOI
- 10.1063/1.3689785
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- Applied Physics Letters, vol. 100, no. 9, page. 093112, 2012-02-27
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- There are no files associated with this item.
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