DC Field | Value | Language |
---|---|---|
dc.contributor.author | KIM, SEYOUNG | - |
dc.date.accessioned | 2020-04-14T00:50:25Z | - |
dc.date.available | 2020-04-14T00:50:25Z | - |
dc.date.created | 2020-04-13 | - |
dc.date.issued | 2012-02-27 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/103392 | - |
dc.description.abstract | We investigate the scaling of Al2O3 dielectric on graphene by atomic layer deposition (ALD) using ultra-thin, oxidized Ti and Al films as nucleation layers. We show that the nucleation layer significantly impacts the dielectric constant (k) and morphology of the ALD Al2O3, yielding k = 5.5 and k = 12.7 for Al and Ti nucleation layers, respectively. Transmission electron microscopy shows that Al2O3 grown using the Ti interface is partially crystalline, while Al2O3 grown on Al is amorphous. Using a spatially uniform 0.6 nm-thick Ti nucleation layer, we demonstrate graphene field-effect transistors with top dielectric stacks as thin as 2.6 nm. | - |
dc.language | English | - |
dc.publisher | Applied Physics Letters | - |
dc.relation.isPartOf | Applied Physics Letters | - |
dc.title | Scaling of Al2O3 dielectric for graphene field-effect transistors | - |
dc.type | Article | - |
dc.identifier.doi | 10.1063/1.3689785 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | Applied Physics Letters, v.100, no.9, pp.093112 | - |
dc.identifier.wosid | 000301504800059 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 093112 | - |
dc.citation.title | Applied Physics Letters | - |
dc.citation.volume | 100 | - |
dc.contributor.affiliatedAuthor | KIM, SEYOUNG | - |
dc.identifier.scopusid | 2-s2.0-84863292577 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | ATOMIC LAYER DEPOSITION | - |
dc.subject.keywordPlus | SURFACE-CHEMISTRY | - |
dc.subject.keywordPlus | OXIDATION | - |
dc.subject.keywordPlus | ALUMINUM | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | OXIDES | - |
dc.subject.keywordAuthor | aluminium compounds | - |
dc.subject.keywordAuthor | atomic layer deposition | - |
dc.subject.keywordAuthor | dielectric materials | - |
dc.subject.keywordAuthor | field effect transistors | - |
dc.subject.keywordAuthor | fullerene devices | - |
dc.subject.keywordAuthor | graphene | - |
dc.subject.keywordAuthor | nucleation | - |
dc.subject.keywordAuthor | permittivity | - |
dc.subject.keywordAuthor | transmission electron microscopy | - |
dc.subject.keywordAuthor | vacuum deposition | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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