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Browsing by  AuthorTANIGAWA, S

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Showing results 1 to 3 of 3
Article
DEPTH PROFILES OF VACANCY-TYPE DEFECT IN SI+-IMPLANTED GAAS RESULTING FROM RAPID THERMAL ANNEALINGSCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 65, no. 1, page. 396 - 397, 1989-01-01

Article
THE EFFECTS OF POINT-DEFECTS ON THE ELECTRICAL ACTIVATION OF SI-IMPLANTED GAAS DURING RAPID THERMAL ANNEALINGSCIESCOPUS

IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 39, no. 1, page. 176 - 183, 1992-01

Article
VACANCY-TYPE DEFECTS IN SI+-IMPLANTED GAAS AND ITS EFFECTS ON ELECTRICAL ACTIVATION BY RAPID THERMAL ANNEALINGSCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 67, no. 10, page. 6153 - 6158, 1990-05-15

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