DEPTH PROFILES OF VACANCY-TYPE DEFECT IN SI+-IMPLANTED GAAS RESULTING FROM RAPID THERMAL ANNEALING
SCIE
SCOPUS
- Title
- DEPTH PROFILES OF VACANCY-TYPE DEFECT IN SI+-IMPLANTED GAAS RESULTING FROM RAPID THERMAL ANNEALING
- Authors
- KIM, JS; LEE, JL; MA, DS; PARK, HM; SHIM, KH; TANIGAWA, S; UEDONO, A
- Date Issued
- 1989-01-01
- Publisher
- AMER INST PHYSICS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/10437
- DOI
- 10.1063/1.342559
- ISSN
- 0021-8979
- Article Type
- Article
- Citation
- JOURNAL OF APPLIED PHYSICS, vol. 65, no. 1, page. 396 - 397, 1989-01-01
- Files in This Item:
-
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.