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DEPTH PROFILES OF VACANCY-TYPE DEFECT IN SI+-IMPLANTED GAAS RESULTING FROM RAPID THERMAL ANNEALING

Title
DEPTH PROFILES OF VACANCY-TYPE DEFECT IN SI+-IMPLANTED GAAS RESULTING FROM RAPID THERMAL ANNEALING
Authors
KIM, JSLEE, JLMA, DSPARK, HMSHIM, KHTANIGAWA, SUEDONO, A
POSTECH Authors
LEE, JL
Date Issued
Jan-1989
Publisher
AMER INST PHYSICS
URI
http://oasis.postech.ac.kr/handle/2014.oak/10437
ISSN
0021-8979
Article Type
Article
Citation
JOURNAL OF APPLIED PHYSICS, vol. 65, page. 396 - 397, 1989-01
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이종람LEE, JONG LAM
Dept of Materials Science & Enginrg
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