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VACANCY-TYPE DEFECTS IN SI+-IMPLANTED GAAS AND ITS EFFECTS ON ELECTRICAL ACTIVATION BY RAPID THERMAL ANNEALING SCIE SCOPUS
- Title
- VACANCY-TYPE DEFECTS IN SI+-IMPLANTED GAAS AND ITS EFFECTS ON ELECTRICAL ACTIVATION BY RAPID THERMAL ANNEALING
- Authors
- LEE, JL; LEE, JY; TANIGAWA, S; UEDONO, A
- Date Issued
- 1990-05-15
- Publisher
- AMER INST PHYSICS
- ISSN
- 0021-8979
- Article Type
- Article
- Citation
- JOURNAL OF APPLIED PHYSICS, vol. 67, no. 10, page. 6153 - 6158, 1990-05-15
- Files in This Item:
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Related Researcher
- 이종람LEE, JONG LAM
- Dept of Materials Science & Enginrg