| Issue Date | Title |
|---|---|
| 2012-Feb | Co-occurrence of Threshold Switching and Memory Switching in Pt/NbOx/Pt Cells for Crosspoint Memory Applications link IEEE ELECTRON DEVICE LETTERS, vol. 33, no. 2, page. 236 - 238, 2012-02 Liu, X; Sadaf, SM; Son, M; Park, J; Shin, J; Lee, W; Seo, K; Lee, D; Hwang, H |
| 2013-Feb | IEEE Electron Device Letters, vol. 34, no. 2, page. 235 - 237, 2013-02 Liu, X; Sadaf, SM; Park, S; Kim, S; Cha, E; Lee, D; Jung, GY; Hwang, H |
| 2012-Mar | Ferroelectricity-induced resistive switching in Pb(Zr 0.52Ti 0.48)O 3/Pr 0.7Ca 0.3MnO 3/Nb-doped SrTiO 3 epitaxial heterostructurePDF link APPLIED PHYSICS LETTERS, vol. 100, no. 11, 2012-03 Sadaf, SM; Bourim, EM; Liu, XJ; Choudhury, SH; Kim, DW; Hwang, H |
| 2012-Jun | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, vol. 209, no. 6, page. 1179 - 1183, 2012-06 Sadaf, SM; Liu, X; Son, M; Park, S; Choudhury, SH; Cha, E; Siddik, M; Shin, J; Hwang, H |
| 2012-Aug | ECS SOLID STATE LETTERS, vol. 1, no. 5, page. Q35 - Q38, 2012-08 Liu, X; Sadaf, SM; Kim, S; Biju, KP; Cao, X; Son, M; Choudhury, SH; Jung, GY; Hwang, H |
| 2012-Apr | Low-Power and Controllable Memory Window in Pt/Pr0.7Ca0.3MnO3/Yttria-Stabilized Zirconia/W Resistive Random-Access Memory Devices link JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, vol. 12, no. 4, page. 3253 - 3255, 2012-04 Liu, X; Biju, KP; Park, J; Park, S; Shin, J; Kim, I; Sadaf, SM; Hwang, H |
| 2012-May | IEEE ELECTRON DEVICE LETTERS, vol. 33, no. 5, page. 718 - 720, 2012-05 Son, M; Liu, X; Sadaf, SM; Lee, D; Park, S; Lee, W; Kim, S; Park, J; Shin, J; Jung, S; Ham, MH; Hwang, H |