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Co-occurrence of Threshold Switching and Memory Switching in Pt/NbOx/Pt Cells for Crosspoint Memory Applications SCIE SCOPUS
- Title
- Co-occurrence of Threshold Switching and Memory Switching in Pt/NbOx/Pt Cells for Crosspoint Memory Applications
- Date Issued
- 2012-02
- Publisher
- IEEE Electron Devices Society
- Abstract
- To integrate bipolar resistive switching cells into crosspoint structures, we serially connect a threshold-switching (TS) Pt/NbO2/Pt device with a memory-switching (MS) Pt/Nb2O5/Pt device and observe the suppression of the undesired sneak current. A simpler Pt/Nb2O5/NbO2/Pt bilayer oxide device was designed; it simultaneously exhibits TS and MS. The unique device characteristics in the metal/oxide/metal structure can be directly integrated into a crosspoint memory array without the diode; this can significantly reduce the fabrication complexity.
- Keywords
- Crosspoint memory; niobium oxide; nonvolatile memory; resistive switching (RS); threshold switching (TS); POLYCRYSTALLINE NB2O5; NEGATIVE-RESISTANCE; NONVOLATILE MEMORY; OXIDE FILMS
- ISSN
- 0741-3106
- Article Type
- Article
- Citation
- IEEE ELECTRON DEVICE LETTERS, vol. 33, no. 2, page. 236 - 238, 2012-02
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