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전체 가 나 다 라 마 바 사 아 자 차 카 타 파 하

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Showing results 1 to 7 of 7

Issue Date	Title
2020-Feb	Comprehensive Analysis of Source and Drain Recess Depth Variations on Silicon Nanosheet FETs for Sub 5-nm Node SoC Application IEEE ACCESS, vol. 8, page. 35873 - 35881, 2020-02 BAEK, ROCK HYUN; JINSU, JEONG; YOON, JUN SIK; SEUNGHWAN, LEE
2020-Mar	Neural Network Based Design Optimization of 14-nm Node Fully-Depleted SOI FET for SoC and 3DIC applications 4th IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2020, 2020-03-17 YUN, HYEOK; BAEK, ROCK HYUN; YOON, JUN SIK; JINSU, JEONG; SEUNGHWAN, LEE; CHOI, HYUNCHUL
2020-Feb	Observation of mobility and velocity behaviors in ultra-scaled L-G=15 nm silicon nanowire field-effect transistors with different channel diameters SOLID-STATE ELECTRONICS, vol. 164, 2020-02 BAEK, ROCK HYUN; YOON, JUN SIK; SEUNGHWAN, LEE; JINSU, JEONG; LEE, JUNJONG
2020-Feb	Power, Performance and Area Analysis of Source/Drain Patterning n/p FinFETs based 6T-SRAM cell for 3-nm technology node 제 27회 반도체학술대회, 2020-02-14 BAEK, ROCK HYUN; LEE, JUNJONG; SEUNGHWAN, LEE; JINSU, JEONG; YOON, JUN SIK
2020-Jan	Sensitivity of Source/Drain Critical Dimension Variations for Sub-5-nm Node Fin and Nanosheet FETs IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 67, no. 1, page. 258 - 262, 2020-01 BAEK, ROCK HYUN; YOON, JUN SIK; JEONG, JINSU; SEUNGHWAN, LEE
2019-Dec	Source/Drain Patterning FinFETs as Solution for Physical Area Scaling Toward 5-nm Node PDF IEEE ACCESS, vol. 7, page. 172290 - 172295, 2019-12 BAEK, ROCK HYUN; YOON, JUN SIK; SEUNGHWAN, LEE; JINSU, JEONG; YUN, HYEOK; KANG, BOHYEON
2020-Aug	Threshold Voltage Variations Induced by Si1-xGex and Si1-xCx of Sub 5-nm Node Silicon Nanosheet Field-Effect Transistors JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, vol. 20, no. 8, page. 4684 - 4689, 2020-08 BAEK, ROCK HYUN; JINSU, JEONG; YOON, JUN SIK; SEUNGHWAN, LEE

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