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Article
Design Technique for Ramped Gate Soft-Programming in Over-Erased NOR Type Flash EEPROM CellsSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, vol. 44, no. 16, page. L578 - L580, 2005-01

Article
High Speed, Low Power Programming in 0.17mum Channel Length NOR-type Floating Gate Flash Memory Cell Free of Drain Turn-On EffectsSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, vol. 43, no. 2A, page. L224 - L226, 2004-02-01

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