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Showing results 1 to 5 of 5
Article
CHARACTERIZATION AND REMOVAL OF SILICON SURFACE RESIDUE RESULTING FROM CHF3/C2F6 REACTIVE ION ETCHINGSCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 76, no. 8, page. 4596 - 4602, 1994-10-15

Article
IMPROVEMENT OF BREAKDOWN CHARACTERISTICS OF A GAAS POWER FIELD-EFFECT TRANSISTOR USING (NH4)2SX TREATMENTSCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 73, no. 7, page. 3539 - 3542, 1993-04-01

Article
INVESTIGATION ON THE INTERFACIAL REACTION OF SIO2/TI0.1W0.9 SYSTEMSCIESCOPUS

JOURNAL OF NON-CRYSTALLINE SOLIDS, vol. 187, page. 149 - 155, 1995-07

Article
MICROSTRUCTURAL DEGRADATION DURING ZN DIFFUSION IN A GAINASP/INP HETEROSTRUCTURE - LAYER MIXING, MISFIT DISLOCATION GENERATION, AND ZN3P2 PRECIPITATIONSCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 72, no. 9, page. 4063 - 4072, 1992-11-01

Article
ZN DIFFUSION ENHANCEMENT OF INTERDIFFUSION IN A GAINASP-INP HETEROSTRUCTURESCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 55, no. 17, page. 1768 - 1770, 1989-10-23

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