IMPROVEMENT OF BREAKDOWN CHARACTERISTICS OF A GAAS POWER FIELD-EFFECT TRANSISTOR USING (NH4)2SX TREATMENT
SCIE
SCOPUS
- Title
- IMPROVEMENT OF BREAKDOWN CHARACTERISTICS OF A GAAS POWER FIELD-EFFECT TRANSISTOR USING (NH4)2SX TREATMENT
- Authors
- KANG, JY; KIM, D; LEE, JL; LEE, YT; MAENG, SJ; PARK, HH
- Date Issued
- 1993-04-01
- Publisher
- AMER INST PHYSICS
- Abstract
- A (NH4)2Sx solution treatment technique was applied to a GaAs metal-semiconductor field-effect transistor (MESFET) to improve the electrical properties of the transistor. The gate leakage current of the MESFET remarkably decreased while the drain breakdown voltage doubled to 30 V with the (NH4)2Sx treatment. The (NH4)2Sx treatment was found to effectively suppress the formation of donor-type defects at the GaAs surface and to increase the Schottky barrier height.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/10450
- DOI
- 10.1063/1.352931
- ISSN
- 0021-8979
- Article Type
- Article
- Citation
- JOURNAL OF APPLIED PHYSICS, vol. 73, no. 7, page. 3539 - 3542, 1993-04-01
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