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KIM, JONG KYU(김종규) researcherid scopus

Department: Dept of Materials Science & Engineering(신소재공학과)

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Publication & Time Cited Count (For the Last 5 years)

Results 1-8 of 8 (Search time: 0.001 seconds).

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Subject : GAN Type : Article Subject : GAN Date Issued : [2010 TO 2019]

Article

Performance of Recessed Anode AlGaN/GaN Schottky Barrier Diode Passivated With High-Temperature Atomic Layer-Deposited Al2O3 LayerSCIESCOPUS

IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 66, no. 1, page. 324 - 329, 2019-01

Article

Temperature dependence of efficiency in GaInN/GaN light-emitting diodes with a GaInN underlayerSCIESCOPUS

International Journal of Applied Ceramic Technology, vol. 13, no. 2, page. 234 - 238, 2016-03

Article

Overcoming the Fundamental Limitation in Light-Extraction Efficiency of Deep-Ultraviolet Light-Emitting Diodes by Utilizing Transverse-Magnetic-Dominant EmissionSCIESCOPUS

Light: Science and Applications, vol. 3, no. 6, page. 9, 2015-04

Article

Correlative High-Resolution Mapping of Strain and Charge Density in a Strained Piezoelectric MultilayerSCIESCOPUS

ADVANCED MATERIALS INTERFACES, vol. 2, no. 1, 2015-01-07

Article

Efficiency droop in light-emitting diodes: Challenges and countermeasuresSCIESCOPUS

LASER & PHOTONICS REVIEWS, vol. 7, no. 3, page. 8 - 421, 2013-05

Article

Analysis of the reverse leakage current in AlGaN/GaN Schottky barrier diodes treated with fluorine plasmaSCIESCOPUS

Applied Physics Letters, vol. 100, no. 13, 2012-03-26

Article

Carrier transport mechanism of AlGaN/GaN Schottky barrier diodes with various Al mole fractionsSCIESCOPUS

Physica Status Solidi (C) Current Topics in Solid State Physics, vol. 9, no. 3-4, page. 851 - 854, 2012-03

Article

Promotion of hole injection enabled by GaInN/GaN light-emitting triodes and its effect on the efficiency droopSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 99, no. 18, page. 181115 - 181117, 2011-10-31

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