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Author : 547 Subject : THIN-FILMS Subject : GATE DIELECTRICS

Article

Electrical characterization of Ti-silicate films grown by atomic layer chemical vapor depositionSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, vol. 46, no. 8A, page. 5259 - 5263, 2007-08

Article

Physical and electrical characterizations of ultrathin Si-rich Hf-silicate film and Hf-silicate/SiO2 bilayer deposited by atomic layer chemical vapor depositionSCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 100, no. 4, page. 44106-1 - 44106-5, 2006-08-15

Article

Highly conformal hafnium silicate film growth by atomic-layer chemical vapor deposition using a new combination of precursors: Hf(OC(CH3)(3))(4) and Si(N(CH3)(C2H5))(4)SCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, vol. 45, no. 6A, page. 5174 - 5177, 2006-06

Article

Atomic layer chemical vapor deposition and electrical characterization of hafnium silicate filmsSCIESCOPUS

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 152, no. 4, page. F45 - F48, 2005-03

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