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HWANG, HYUNSANG(황현상) scopus
Department
Dept of Materials Science & Engineering(신소재공학과)
Major(s)
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    Keyword

    Publication & Time Cited Count (For the Last 5 years)

    Results 1-20 of 34 (Search time: 0.001 seconds).
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    Date Issued : [2012 TO 2019]
    Conference
    Proton–Based Three–Terminal Synapse Device with Analog Conductance Change and Linear I-V Characteristics for Neuromorphic Systems

    The 26th Korean Conference on Semiconductors / 제 26회 한국반도체학술대회, 2019-02-14

    Conference
    NbO2-Based IMT Device for Neuromorphic Applications

    The 26th Korean Conference on Semiconductors / 제 26회 한국반도체학술대회, 2019-02-14

    Conference
    Thermally Stable Resistive Switching Characteristics of Te-Based Conductive-Bridge Memoryby Optimizing Zr-Te Composition

    The 25th Korean Conference on Semiconductors / 제 25회 한국반도체학술대회, 2018-02-07

    Conference
    Improved On-Current of Ag/NiO/TiO2/Pt Threshold Switching Device by Suppressing the Ag Incorporation

    The 25th Korean Conference on Semiconductors / 제 25회 한국반도체학술대회, 2018-02-07

    Conference
    Hardware Implementation of Neural Network Using Pre-Programmed Resistive Device for Pattern Recognition

    The 25th Korean Conference on Semiconductors / 제 25회 한국반도체학술대회, 2018-02-06

    Conference
    Evaluation of Weight Quantization Method in Neural Network with TaOx-Based RRAM

    The 25th Korean Conference on Semiconductors / 제 25회 한국반도체학술대회, 2018-02-06

    Conference
    Bidirectional Threshold Switching in Ag:Cu2O-based Multilayer Stack for Cross-Point Selector Application

    제23회 한국반도체학술대회, 2016-02-24

    Conference
    Demonstration of Bi-Directional Selector in 8 inch Wafer Process with Fully CMOS Compatibility for ReRAM Cross-Point Array

    제23회 한국반도체학술대회, 2016-02-24

    Conference
    Resistance Controllability and Variability Improvement in a TaOx- based Resistive Memory for Multilevel Storage Application

    제23회 한국반도체학술대회, 2016-02-24

    Conference
    Origin of Leakage Current of NbOx Film and Improved Threshold Switching Characteristics of Multi-layer NbOx Selector

    제23회 한국반도체학술대회, 2016-02-23

    Conference
    Reliability of Hour-Glass Shaped Filament in a Cu-based Al2O3/WO3 Conductive Bridge RAM System

    제23회 한국반도체학술대회, 2016-02-23

    Conference
    Suppression of the Reset Breakdown Failure by using RuO2 Electrode in HfOx-based RRAM

    제23회 한국반도체학술대회, 2016-02-23

    Conference
    Effects of Gate Bias on Reset Failure in HfO2 based 1T1R ReRAM Cell

    제23회 한국반도체학술대회, 2016-02-23

    Conference
    Effects of N-GST Buffer Layer on Switching Characteristics of CBRAM

    제23회 한국반도체학술대회, 2016-02-23

    Conference
    Towards High Performance Selector Device for 3D Stacked Cross-Point Arrays

    제 21회 한국반도체학술대회, 2015-02-25

    Conference
    Hardware Implementation of Associative Memory Characteristics

    제 21회 한국반도체학술대회, 2015-02-25

    Conference
    Selector-less ReRAM with an Excellent Selectivity by the Tunnel Barrier Engineered Multi-layer Titanium Oxide and Triangular Shaped AC Pulse

    제22회 한국반도체학술대회, 2015-02-12

    Conference
    Multi-state resistance controllability and variability analysis of binary oxide RRAM for ultra-high density memory applications

    제22회 한국반도체학술대회, 2015-02-12

    Conference
    Sub-Oxide Dependence of Insulator Metal Transition Characteristics on 3-D Structural Niobium Oxide Selector

    제22회 한국반도체학술대회, 2015-02-12

    Conference
    Improvement in reliability characteristics (retention and endurance) of RRAM by using high-pressure hydrogen annealing

    제22회 한국반도체학술대회, 2015-02-12

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