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HWANG, HYUNSANG(황현상) scopus

Department: Dept of Materials Science & Engineering(신소재공학과)

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Publication & Time Cited Count (For the Last 5 years)

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Date Issued : [2012 TO 2019] Date Issued : 2014

Conference

Direct Observation of Interfacial Switching Processes of PrxCa1-xMnO3–based ReRAM Devices using in situ TEM

2014 Fall Korean Society of Microscopy Conference, 2014-11-13

Conference

Building Artificial Brains using Redox-based Memristive Synapses

2014 INVITATION WORKSHOP FOR MEMRISTOR, 2014-04-18

황현상

Conference

Excellent Non-Linear I-V Characteristics of Ti/HfOx ReRAM with Ultrathin TiOy Tunnel Barrier for Cross Point Memory Application

제 21회 한국반도체학술대회, 2014-02-26

황현상

Conference

Metal-Insulator-Transition in Nano Scale SmNiO3 for Selector Application with BEOL Compatibility

제 21회 한국반도체학술대회, 2014-02-26

황현상

Conference

An Investigation of Electrical Characteristics in TiOx Thin Film by Controlling Oxygen Vacancy

제 21회 한국반도체학술대회, 2014-02-26

황현상

Conference

Improved synaptic characteristics of filamentary ReRAM by adopting interfacial oxide for neuromorphic device application

제 21회 한국반도체학술대회, 2014-02-25

황현상

Conference

Improvement in the ON/OFF Ratio (~107) and Switching Uniformity of an Atom Switch Using TiOx Layer for Reconfigurable Logic Application

제 21회 한국반도체학술대회, 2014-02-25

황현상

Conference

A Two-Step Set Operation for Reliability of ReRAM with Triple-Layer ReRAM

제 21회 한국반도체학술대회, 2014-02-25

황현상

Conference

Improved Reliability of RRAM by Optimizing Pulse Shape to Minimize Current Overshoot

제 21회 한국반도체학술대회, 2014-02-25

황현상

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