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KIM, HYUNGJUN(김형준)

Department: Dept of Materials Science & Engineering(신소재공학과)

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Publication & Time Cited Count (For the Last 5 years)

Results 1-7 of 7 (Search time: 0.002 seconds).

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Article

NiO Resistive Random Access Memory Nanocapacitor Array on GrapheneSCIESCOPUS

ACS NANO, vol. 4, no. 5, page. 2655 - 2658, 2010-05

Article

HFO2/HFOXNY/HFO2 GATE DIELECTRIC FABRICATED BY IN SITU OXIDATION OF PLASMA-ENHANCED ATOMIC LAYER DEPOSITION HFN MIDDLE LAYERSCIESCOPUS

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 156, no. 8, page. G109 - G113, 2009-01

Article

Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer DepositionSCIESCOPUS

SMALL, vol. 4, no. 12, page. 2247 - 2254, 2008-12

Article

High quality epitaxial CoSi2 using plasma nitridation-mediated epitaxy: The effects of the capping layerSCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 102, no. 9, 2007-11-01

Article

Comparative studies of atomic layer deposition and plasma-enhanced atomic layer deposition Ta2O5 and the effects on electrical properties of in situ nitridationSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, vol. 46, no. 5B, page. 3224 - 3228, 2007-05

Article

Electrical property improvements of high-k gate oxide by in situ nitrogen incorporation during atomic layer depositionSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 90, no. 6, 2007-02-05

Article

High-capacity, self-assembled metal-oxide-semiconductor decoupling capacitorsSCIESCOPUS

IEEE ELECTRON DEVICE LETTERS, vol. 25, no. 9, page. 622 - 624, 2004-09

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