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KIM, HYUNGJUN(김형준)
Department
Dept of Materials Science & Engineering(신소재공학과)
Major(s)
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    Publication & Time Cited Count (For the Last 5 years)

    Results 1-8 of 8 (Search time: 0.001 seconds).
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    Journal Registered : scie Date Issued : 2007
    Article
    Dependence of electrical properties on interfacial layer of Ta2O5 filmsSCIESCOPUS

    MICROELECTRONIC ENGINEERING, vol. 84, no. 12, page. 2865 - 2868, 2007-12

    Article
    High quality epitaxial CoSi2 using plasma nitridation-mediated epitaxy: The effects of the capping layerSCIESCOPUS

    JOURNAL OF APPLIED PHYSICS, vol. 102, no. 9, 2007-11-01

    Article
    High performance thin film transistor with low temperature atomic layer deposition nitrogen-doped ZnOSCIESCOPUS

    APPLIED PHYSICS LETTERS, vol. 91, no. 18, 2007-10-29

    Article
    Surface charge on ferroelectric thin film by high electric field induced at scanning probe microscope tipSCIESCOPUSKCI

    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, vol. 51, page. S125 - S128, 2007-10

    Article
    Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectricsSCIESCOPUS

    APPLIED PHYSICS LETTERS, vol. 91, no. 9, 2007-08-27

    Article
    Nitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition CoSCIESCOPUS

    APPLIED PHYSICS LETTERS, vol. 90, no. 21, 2007-05-21

    Article
    Comparative studies of atomic layer deposition and plasma-enhanced atomic layer deposition Ta2O5 and the effects on electrical properties of in situ nitridationSCIESCOPUS

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, vol. 46, no. 5B, page. 3224 - 3228, 2007-05

    Article
    Electrical property improvements of high-k gate oxide by in situ nitrogen incorporation during atomic layer depositionSCIESCOPUS

    APPLIED PHYSICS LETTERS, vol. 90, no. 6, 2007-02-05

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