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LEE, JONG LAM(이종람) researcherid scopus
Department
Dept of Materials Science & Engineering(신소재공학과)
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    Publication & Time Cited Count (For the Last 5 years)

    Results 21-26 of 26 (Search time: 0.001 seconds).
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    Article
    High-temperature structural behavior of Ni/Au contact on GaN (0001)SCIESCOPUS

    MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, vol. 6, no. 4, page. 1 - 7, 2001-01

    Article
    Ohmic contact formation mechanism of Pd nonalloyed contacts on p-type GaNSCIESCOPUS

    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 147, no. 6, page. 2297 - 2302, 2000-06

    Article
    Application of nonalloyed PdGe ohmic contact to self-aligned gate AlGaAs/InGaAs pseudomorphic high-electron-mobility transistorSCIESCOPUS

    APPLIED PHYSICS LETTERS, vol. 74, no. 19, page. 2866 - 2868, 1999-05-10

    Article
    Effect of surface treatment by (NH4)(2)S-x solution on the reduction of ohmic contact resistivity of p-type GaNSCIESCOPUS

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 17, no. 2, page. 497 - 499, 1999-03

    Article
    Contact resistance degradation of Pd/Ge ohmic contact on pseudomorphic high electron mobility transistorSCIESCOPUS

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 16, no. 5, page. 2725 - 2728, 1998-09

    Article
    A 68% PAE, GaAs power MESFET operating at 2.3 V drain bias for low distortion power applicationsSCIESCOPUS

    IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 43, no. 4, page. 519 - 526, 1996-04

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