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LEE, JONG LAM(이종람) researcherid scopus
Department
Dept of Materials Science & Engineering(신소재공학과)
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    Publication & Time Cited Count (For the Last 5 years)

    Results 1-8 of 8 (Search time: 0.002 seconds).
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    Date Issued : [2000 TO 2009] Date Issued : 2000
    Article
    Microstructural investigation of Ni/Au ohmic contact on p-type GaNSCIESCOPUS

    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 147, no. 12, page. 4645 - 4651, 2000-12

    Article
    Selective wet etching of GaAs on Al0.24Ga0.76As for GaAs/Al0.24Ga0.76As/In0.22Ga0.78As PHEMTSCIESCOPUS

    ELECTRONICS LETTERS, vol. 36, no. 23, page. 1974 - 1975, 2000-11-09

    Article
    Structural evolution of ZnO/sapphire(001) heteroepitaxy studied by real time synchrotron x-ray scatteringSCIESCOPUS

    APPLIED PHYSICS LETTERS, vol. 77, no. 3, page. 349 - 351, 2000-07-17

    Article
    Pretreatment effects by aqua-regia solution on field emission of diamond filmSCIESCOPUS

    APPLIED PHYSICS LETTERS, vol. 76, no. 25, page. 3694 - 3696, 2000-06-19

    Article
    Ohmic contact formation mechanism of Pd nonalloyed contacts on p-type GaNSCIESCOPUS

    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 147, no. 6, page. 2297 - 2302, 2000-06

    Article
    The effect of Pd coating on electron emission from silicon field emitter arraysSCIESCOPUS

    JOURNAL OF APPLIED PHYSICS, vol. 87, no. 10, page. 7349 - 7353, 2000-05-15

    Article
    3.3V supply single-voltage-operating double-planar-doped AlGaAs/InGaAs PHEMT with double channel for 1.6GHz digital mobile communicationsSCIESCOPUS

    ELECTRONICS LETTERS, vol. 36, no. 3, page. 262 - 264, 2000-02-03

    Article
    Transparent Pt ohmic contact on p-type GaN with low resistivity using (NH4)(2)S-x treatmentSCIESCOPUS

    ELECTROCHEMICAL AND SOLID STATE LETTERS, vol. 3, no. 1, page. 53 - 55, 2000-01

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