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KANG, BONG KOO(강봉구)
Department
Dept of Electrical Engineering(전자전기공학과)
Major(s)
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    Publication & Time Cited Count (For the Last 5 years)

    Results 1-8 of 8 (Search time: 0.002 seconds).
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    Subject : STRESS
    Article
    Method to extract parameters of power law for nano-scale SiON pMOSFETs under negative bias temperature instabilitySCIESCOPUS

    MICROELECTRONICS RELIABILITY, vol. 88-90, page. 191 - 195, 2018-09

    Article
    Quasi-Resonant Passive Snubber for Improving Power Conversion Efficiency of a DC-DC Step-Down ConverterSCIESCOPUS

    IEEE TRANSACTIONS ON POWER ELECTRONICS, vol. 33, no. 3, page. 2026 - 2034, 2018-03

    Article
    Voltage dependent degradation of HfSiON/SiO2 nMOSFETs under positive bias temperature instabilitySCIESCOPUS

    MICROELECTRONICS RELIABILITY, vol. 54, no. 11, page. 2383 - 2387, 2014-11

    Article
    Saturation of threshold-voltage shift during positive bias temperature instability in HfSiON/SiO2 n-channel MOSFET and its effect on device lifetime evaluationSCIESCOPUS

    JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 53, no. 8, page. 10 - 13, 2014-08

    Article
    Effect of electron-electron scattering at an elevated temperature on device lifetime of nanoscale nMOSFETsSCIESCOPUS

    Microelectronics Reliability, vol. 52, no. 9, page. 1905 - 1908, 2012-09

    Article
    Improvement of Power-Conversion Efficiency of a DC–DC Boost Converter Using a Passive Snubber CircuitSCIESCOPUS

    IEEE Transactions on Industrial Electronics, vol. 59, no. 4, page. 1808 - 1814, 2012-04

    Article
    Recovery of negative bias temperature instability induced degradation of p-MOSFETs with SiON gate dielectricSCIESCOPUS

    MICROELECTRONIC ENGINEERING, vol. 85, no. 9, page. 1932 - 1936, 2008-09

    Article
    Time-dependent degradation due to negative bias temperature instability of p-MOSFET with an ultra-thin SiON gate dielectricSCIESCOPUS

    MICROELECTRONIC ENGINEERING, vol. 83, no. 3, page. 520 - 527, 2006-03

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