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KANG, BONG KOO(강봉구)

Department: Dept of Electrical Engineering(전자전기공학과)

Major(s): -

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Publication & Time Cited Count (For the Last 5 years)

Results 1-9 of 9 (Search time: 0.002 seconds).

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Type : Article Subject : MODEL

Article

Method to estimate profile of threshold voltage degradation in MOSFETs due to electrical stressSCIESCOPUS

MICROELECTRONICS RELIABILITY, vol. 88-90, page. 186 - 190, 2018-09

Article

Channel width dependence of AC stress on bulk nMOSFETsSCIESCOPUS

Microelectronics Reliability, vol. 64, page. 194 - 198, 2016-09

Article

Method to predict length dependency of negative bias temperature instability degradation in p-MOSFETsSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 55, no. 8, 2016-08

Article

Effect of dynamic stress on off leakage of small-dimension pMOSFETs at high temperatureSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 53, no. 4, 2014-04

Article

Effect of electron-electron scattering at an elevated temperature on device lifetime of nanoscale nMOSFETsSCIESCOPUS

Microelectronics Reliability, vol. 52, no. 9, page. 1905 - 1908, 2012-09

Article

Effect of La2O3 Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-k/Metal Gate StacksSCIESCOPUS

Japanese Journal of Applied Physics, vol. 51, no. 2, 2012-02

Article

Effect of OFF-State Stress and Drain Relaxation Voltage on Degradation of a Nanoscale nMOSFET at High TemperatureSCIESCOPUS

IEEE ELECTRON DEVICE LETTERS, vol. 32, no. 7, page. 856 - 858, 2011-07

Article

Electrical method of measuring physical thickness and nitrogen concentration of silicon oxynitride gate dielectric for MOSFETsSCIESCOPUS

MICROELECTRONIC ENGINEERING, vol. 85, no. 8, page. 1820 - 1825, 2008-08

Article

Plasma uniformity of inductively coupled plasma reactor with helical heating coilSCIESCOPUS

IEEE TRANSACTIONS ON PLASMA SCIENCE, vol. 29, no. 2, page. 383 - 387, 2001-04

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