Method to estimate profile of threshold voltage degradation in MOSFETs due to electrical stress
SCIE
SCOPUS
- Title
- Method to estimate profile of threshold voltage degradation in MOSFETs due to electrical stress
- Authors
- Yun, Yeohyeok; Seo, Ji-Hoon; Son, Donghee; Kang, Bongkoo
- Date Issued
- 2018-09
- Publisher
- Elsvier
- Abstract
- This paper presents a method to measure the threshold voltage degradation Delta V-th along the channel direction due to electrical stress in MOSFETs. This method uses Delta V(th)s measured after electrical stress at different drain bias V(d)s, and calculated the depletion length L-dep into the channel for each condition under which Delta V-th is measured. By substituting Delta V-th and L-dep into the proposed equation, the amount of degradation generated in each region of the MOSFET channel can be calculated. The Delta V-th profiles of OFF-state stress and negative bias temperature instability in pMOSFET and hot carrier injection in nMOSFET were extracted using the proposed method. The degradation profiles correspond well with each stress characteristic.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/98660
- DOI
- 10.1016/j.microrel.2018.07.055
- ISSN
- 0026-2714
- Article Type
- Article
- Citation
- MICROELECTRONICS RELIABILITY, vol. 88-90, page. 186 - 190, 2018-09
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