All-Solid-State Synaptic Transistors with High-Temperature Stability Using Proton Pump Gating of Strongly Correlated Materials
- All-Solid-State Synaptic Transistors with High-Temperature Stability Using Proton Pump Gating of Strongly Correlated Materials
- Oh, C.; Jo, M.; Son, J.
- Date Issued
- AMER CHEMICAL SOC
- Designing energy-efficient artificial synapses with adaptive and programmable electronic signals is essential to effectively mimic synaptic functions for brain-inspired computing systems. Here, we report all-solid-state three-terminal artificial synapses that exploit proton-doped metal-insulator transition in a correlated oxide NdNiO3 (NNO) channel by proton (H+) injection/extraction in response to gate voltage. Gate voltage reversibly controls the H+ concentration in the NNO channel with facile H+ transport from a H+-containing porous silica electrolyte. Gate-induced H+ intercalation in the NNO gives rise to nonvolatile multilevel analogue states due to H+-induced conductance modulation, accompanied by significant modulation of the out-of-plane lattice parameters. This correlated transistor operated by a proton pump shows synaptic characteristics such as long-term potentiation and depression, with nonvolatile and distinct multilevel conductance switching by a low voltage pulse (>= SO mV), with high energy efficiency (similar to 1 pJ) and tolerance to heat (<= 1.50 degrees C). These results will guide the development of scalable, thermally-stable solid-state electronic synapses that operate at low voltage.
- Article Type
- ACS APPLIED MATERIALS & INTERFACES, vol. 11, no. 17, page. 15733 - 15740, 2019-05
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