Organic n-Channel Transistors Based on [1]Benzothieno[3,2-b]benzothiophene-Rylene Diimide Donor-Acceptor Conjugated Polymers
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- Title
- Organic n-Channel Transistors Based on [1]Benzothieno[3,2-b]benzothiophene-Rylene Diimide Donor-Acceptor Conjugated Polymers
- Authors
- Samanta, Suman Kalyan; Song, Inho; Yoo, Jong Heun; Oh, Joon Hak
- Date Issued
- 2018-09
- Publisher
- AMER CHEMICAL SOC
- Abstract
- Improving the charge-carrier mobility of conjugated polymers is important for developing high-performance, solution-processed optoelectronic devices. Although [1]benzothieno[3,2-b]benzothiophene (BTBT) has been frequently used as a high-performance p-type small molecular semiconductor and employed a few times as a building block for p-type conjugated polymers, it has never been explored as a donor moiety for high-performance n-type conjugated polymers. Here, BTBT has been conjugated with either n-type perylene diimide (PDI) or naphthalene diimide (NDI) units to generate a donor-acceptor copolymer backbone, for the first time. Charge-transport measurements of organic field-effect transistors show n-type dominant behaviors, with the electron mobility reaching similar to 0.11 cm(2) V-1 s(-1) for PDI-BTBT and similar to 0.050 cm(2) V-1 s(-1) for NDI-BTBT. The PDI-BTBT mobility value is one of the highest among the PDI-containing polymers. The high pi-pi stacking propensity of BTBT significantly improves the charge-carrier mobility in these polymers, as supported by atomic force microscopy and grazing incidence X-ray diffraction analyses. Phototransistor applications of these polymers in the n-type mode show highly sensitive photoresponses. Our findings demonstrate that incorporation of the BTBT donor unit within the rylene diimide acceptor-based conjugated polymers can improve the molecular ordering and electron mobility.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/99251
- DOI
- 10.1021/acsami.8b10831
- ISSN
- 1944-8244
- Article Type
- Article
- Citation
- ACS APPLIED MATERIALS & INTERFACES, vol. 10, no. 38, page. 32444 - 32453, 2018-09
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