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Strain-Mediated Phase Stabilization: A New Strategy for Ultrastable alpha-CsPbI3 Perovskite by Nanoconfined Growth SCIE SCOPUS

Title
Strain-Mediated Phase Stabilization: A New Strategy for Ultrastable alpha-CsPbI3 Perovskite by Nanoconfined Growth
Authors
Ma, SunihlKIM, SEONG HUNJeong, BeomjinKwon, Hyeok-ChanYun, Seong-CheolJang, GyuminYang, HyunhaPark, CheolminLEE, DONGHWAMoon, Jooho
Date Issued
2019-05
Publisher
WILEY-V C H VERLAG GMBH
Abstract
All-inorganic cesium lead triiodide (CsPbI3) perovskite is considered a promising solution-processable semiconductor for highly stable optoelectronic and photovoltaic applications. However, despite its excellent optoelectronic properties, the phase instability of CsPbI3 poses a critical hurdle for practical application. In this study, a novel stain-mediated phase stabilization strategy is demonstrated to significantly enhance the phase stability of cubic a-phase CsPbI3. Careful control of the degree of spatial confinement induced by anodized aluminum oxide (AAO) templates with varying pore sizes leads to effective manipulation of the phase stability of alpha-CsPbI3. The Williamson-Hall method in conjunction with density functional theory calculations clearly confirms that the strain imposed on the perovskite lattice when confined in vertically aligned nanopores can alter the formation energy of the system, stabilizing alpha-CsPbI3 at room temperature. Finally, the CsPbI3 grown inside nanoporous AAO templates exhibits exceptional phase stability over three months under ambient conditions, in which the resulting light-emitting diode reveals a natural red color emission with very narrow bandwidth (full width at half maximum of 33 nm) at 702 nm. The universally applicable template-based stabilization strategy can give in-depth insights on the strain-mediated phase transition mechanism in all-inorganic perovskites.
URI
https://oasis.postech.ac.kr/handle/2014.oak/98918
DOI
10.1002/smll.201900219
ISSN
1613-6810
Article Type
Article
Citation
SMALL, vol. 15, no. 21, 2019-05
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이동화LEE, DONGHWA
Dept of Materials Science & Enginrg
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