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Read static noise margin 분석을 통한 SRAM cell의 near-threshold 영역 동작 평가
- Title
- Read static noise margin 분석을 통한 SRAM cell의 near-threshold 영역 동작 평가
- Authors
- KIM, YOUNG HWAN; 방병준; 권현정
- Date Issued
- 2018-05-11
- Publisher
- 대한전자공학회 SoC 설계 연구회
- Article Type
- Conference
- Citation
- SoC학술대회 2018, 2018-05-11
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Related Researcher
- 김영환KIM, YOUNG HWAN
- Dept of Electrical Enginrg