Enhanced overall efficiency of GaInN-based light-emitting diodes with reduced efficiency droop by Al-composition-graded AlGaN/GaN superlattice electron blocking layer
SCIE
SCOPUS
- Title
- Enhanced overall efficiency of GaInN-based light-emitting diodes with reduced efficiency droop by Al-composition-graded AlGaN/GaN superlattice electron blocking layer
- Authors
- Jun Hyuk Park; Dong Yeong Kim; Sunyong Hwang; David Meyaard; E. Fred Schubert; Yu Dae Han; Joo Won Choi; Jaehee Cho; Kim, JK
- Date Issued
- 2013-08-05
- Publisher
- American Institute of Physics
- Abstract
- AlxGa1-xN/GaN superlattice electron blocking layers (EBLs) with gradually decreasing Al composition toward the p-type GaN layer are introduced to GaInN-based high-power light-emitting diodes (LEDs). GaInN/GaN multiple quantum well LEDs with 5- and 9-period Al-composition-graded AlxGa1-xN/GaN EBL show comparable operating voltage, higher efficiency as well as less efficiency droop than LEDs having conventional bulk AlGaN EBL, which is attributed to the superlattice doping effect, enhanced hole injection into the active region, and reduced potential drop in the EBL by grading Al compositions. Simulation results reveal a reduction in electron leakage for the superlattice EBL, in agreement with experimental results. (C) 2013 AIP Publishing LLC.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9770
- DOI
- 10.1063/1.4817800
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- Applied Physics Letters, vol. 103, no. 6, 2013-08-05
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