Temperature dependent efficiency droop in GaInN light-emitting diodes with different current densities
SCIE
SCOPUS
- Title
- Temperature dependent efficiency droop in GaInN light-emitting diodes with different current densities
- Authors
- David S. Meyaard; Qifeng Shan; Jaehee Cho; E. Fred Schubert; Sang-Heon Han; Min-Ho Kim; Cheolsoo Sone; Seung Jae Oh; Kim, JK
- Date Issued
- 2012-02-20
- Publisher
- AMER INST PHYSICS
- Abstract
- The effect of chip area on the temperature-dependent light-output power (LOP) in GaInN-based light-emitting diodes (LEDs) is investigated. The larger the chip size, the faster the reduction in LOP with increasing temperature becomes, indicating that increasing the size of LED chips, a technology trend for reducing the efficiency droop at high currents, is detrimental for high temperature-tolerant LEDs. In addition, it is found that regardless of chip size, the temperature-dependent LOP is identical for the LEDs operating at the same current density. (C) 2012 American Institute of Physics. [doi:10.1063/1.3688041]
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9761
- DOI
- 10.1063/1.3688041
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 100, no. 8, 2012-02-20
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