Engineering the Metal Gate Electrode for Controlling the Threshold Voltage of Organic Transistors
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SCOPUS
- Title
- Engineering the Metal Gate Electrode for Controlling the Threshold Voltage of Organic Transistors
- Authors
- Chung, Y; Johnson, O; Deal, M; Nishi, Y; Murmann, B; Bao, ZA
- Date Issued
- 2012-08
- Publisher
- AIP Publishing
- Abstract
- For practical applications of organic field-effect transistors (OFETs), the control of threshold voltage (V-TH) is important as different circuits require different electrical characteristics. Here, we demonstrate two types of gate electrode structures to achieve this control, namely, via dual-metal gates and bilayer metal gates. The first approach uses different metallic materials, titanium, and platinum, while the second approach uses different thicknesses in a metal bilayer composed of aluminum and platinum. Our results show that the VTH is varied by more than 20% of the supply voltage without affecting the field-effect mobility values for both pentacene p-channel and C-60 n-channel OFETs. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4739511]
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9732
- DOI
- 10.1063/1.4739511
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 101, no. 6, page. 63304, 2012-08
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